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Indium arsenide antimonide phosphide () is a semiconductor material. InAsSbP has been widely used as blocking layers for semiconductor laser structures,〔Calculation of spatial intensity distribution of InAsSb/InAsSbP laser diode emission, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, G. I. Ryabtsev, A. N. Imenkov and Yu. P. Yakovlev, Journal of Applied Spectroscopy, vol. 75 num. 6 805-809 〕 as well as for the mid-infrared light-emitting diodes, photodetectors and thermophotovoltaic cells. InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The vibrational properties of the alloy has been investigated by Raman spectroscopy.〔Raman scattering in InAsxSbyP1−x−y alloys grown by gas source MBE, K. J. Cheetham, A. Krier, I. I. Patel, F. L. Martin, J-S. Tzeng, C-J. Wu and H-H. Lin, J. of Phys. D: Appl. Phys. vol. 44 num. 8 〕 ==See also== * Aluminium gallium indium phosphide * Gallium indium arsenide antimonide phosphide 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Indium arsenide antimonide phosphide」の詳細全文を読む スポンサード リンク
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